According to topology industry research institute, the global SiC substrate output will reach 180 million usd in 2018, while GaN substrate output will only be about 3 million usd.

Tinto 墣 industry research institute, points out that compared with the current mainstream silicon wafers (Si), the third generation semiconductor material SiC and GaN in addition to the characteristics of high voltage resistance, also have high temperature resistance and suitable for high frequency respectively under the action of advantages, not only can make the chip area can be greatly reduced, and can simplify the design of the peripheral circuit, decrease the module, system components and the volume of the cooling system.

In addition, in addition to light the vehicle design, low on resistance of the third generation of semiconductor and the characteristics of low switching losses, also can greatly reduce the energy conversion in the operation of the vehicle damage, both for electric vehicle range of considerable help.

Therefore, the technology and market development of SiC and GaN power components are closely related to the development of electric vehicles.

SiC materials, however, is still in the validation and import stage, applies only to the car in the field of vehicle at present stage, therefore, at this stage of the global automotive power components, using SiC solution area is less than one over one thousand.

Currently on the market, on the other hand, GaN power components in GaN - on - SiC and GaN - on - Si two wafer manufacturing, including GaN - on - SiC in the most advantage on the cooling performance is quite good for application in high temperature, high frequency operation environment, so in the application of 5 g base station the highest visibility, expected SiC substrate in the next five years in the depot validation and 5 g commercial led by 2020, will enter a high-speed growth period.

Although the cost of GaN substrate is high in the process of area enlargement, the output value of GaN substrate is still less than SiC substrate. However, GaN's advantage in high frequency operation is still the focus of major technology companies.

In addition to a high standard of products using GaN - on - SiC technology, GaN - on - Si good through its relative cost advantage, become the market mainstream GaN power components, in the automotive, smart phones, the required power management chip and the application of the charging system the most growth.

Tinto 墣 industry research institute points out, to observe the development of the supply chain, due to the 5 g and automobile technology is the focus of industry growth trend, the supply chain has developed a wafer foundry patterns, provide customer the SiC and GaN foundry business service, change the past only by Cree, Infineon, Qorvo integrated components such as metal supply situation.

In the GaN part, TSMC and world advanced provide the OEM business of gan-on-si, while chinachem specializes in the opportunity of gan-on-sic to target 5G base stations.

In addition, x-fab, hanlei and huanyu also provide OEM services for SiC and GaN. With the development of OEM business, the market scale of third-generation semiconductor materials will be further expanded.

According to topology industry research institute, the global SiC substrate output will reach 180 million usd in 2018, while GaN substrate output will only be about 3 million usd.

Tinto 墣 industry research institute, points out that compared with the current mainstream silicon wafers (Si), the third generation semiconductor material SiC and GaN in addition to the characteristics of high voltage resistance, also have high temperature resistance and suitable for high frequency respectively under the action of advantages, not only can make the chip area can be greatly reduced, and can simplify the design of the peripheral circuit, decrease the module, system components and the volume of the cooling system.

In addition, in addition to light the vehicle design, low on resistance of the third generation of semiconductor and the characteristics of low switching losses, also can greatly reduce the energy conversion in the operation of the vehicle damage, both for electric vehicle range of considerable help.

Therefore, the technology and market development of SiC and GaN power components are closely related to the development of electric vehicles.

SiC materials, however, is still in the validation and import stage, applies only to the car in the field of vehicle at present stage, therefore, at this stage of the global automotive power components, using SiC solution area is less than one over one thousand.

Currently on the market, on the other hand, GaN power components in GaN - on - SiC and GaN - on - Si two wafer manufacturing, including GaN - on - SiC in the most advantage on the cooling performance is quite good for application in high temperature, high frequency operation environment, so in the application of 5 g base station the highest visibility, expected SiC substrate in the next five years in the depot validation and 5 g commercial led by 2020, will enter a high-speed growth period.

Although the cost of GaN substrate is high in the process of area enlargement, the output value of GaN substrate is still less than SiC substrate. However, GaN's advantage in high frequency operation is still the focus of major technology companies.

In addition to a high standard of products using GaN - on - SiC technology, GaN - on - Si good through its relative cost advantage, become the market mainstream GaN power components, in the automotive, smart phones, the required power management chip and the application of the charging system the most growth.

Tinto 墣 industry research institute points out, to observe the development of the supply chain, due to the 5 g and automobile technology is the focus of industry growth trend, the supply chain has developed a wafer foundry patterns, provide customer the SiC and GaN foundry business service, change the past only by Cree, Infineon, Qorvo integrated components such as metal supply situation.

In the GaN part, TSMC and world advanced provide the OEM business of gan-on-si, while chinachem specializes in the opportunity of gan-on-sic to target 5G base stations.

In addition, x-fab, hanlei and huanyu also provide OEM services for SiC and GaN. With the development of OEM business, the market scale of third-generation semiconductor materials will be further expanded.